 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collctor current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage tp = 1 ms Tvj = 25C TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1700 200 400 400 V A A A TC = 25C, Transistor Ptot 1660 W VGES +/- 20V V IF 200 A IFRM 400 A VR = 0V, tp = 10ms, Tvj = 125C I2t 11 k A2s RMS, f = 50 Hz, t = 1 min. VISOL 3,4 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 200A, VGE = 15V, Tvj = 25C IC = 200A, VGE = 15V, Tvj = 125C IC = 9mA, VCE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,5 typ. 2,6 3,1 5,5 max. 3,2 3,6 6,5 V V V VGE = -15V ... +15V QG - 2,4 - C f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 15 - nF f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cres - 0,7 - nF VCE = 1700V, VGE = 0V, Tvj = 25C ICES - - 5 mA VCE = 0V, VGE = 20V, Tvj = 25C IGES - - 400 nA prepared by: Alfons Wiesenthal approved by: Dr. Schilling date of publication: 2002-07-04 revision: 3 1(8) BSM200GB170DLC_3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip IC = 200A, VCE = 900V, VGE = 15V RG = 7,5W, Tvj = 125C, Ls = 60nH IC = 200A, VCE = 900V, VGE = 15V RG = 7,5W, Tvj = 125C, Ls = 60nH tP 10sec, VGE 15V, RG = 7,5W TVj125C, VCC=1000V, VCEmax=VCES -LsCE *di/dt Anschlusse / terminals: 2 - 3 ISC LsCE 800 20 A nH Eoff 65 mJ Eon 90 mJ tf 0,03 0,03 s s td,off 0,80 0,90 s s tr 0,10 0,10 s s td,on 0,10 0,10 s s min. typ. max. pro Zweig / per arm, TC = 25C RCC'+EE' - 0,60 - mW Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 200A, VGE = 0V, Tvj = 25C IF = 200A, VGE = 0V, Tvj = 125C IF = 200A, - diF/dt = 2300A/s VR = 900V, VGE = -15V, Tvj = 25C VR = 900V, VGE = -15V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 200A, - diF/dt = 2300A/s VR = 900V, VGE = -15V, Tvj = 25C VR = 900V, VGE = -15V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 200A, - diF/dt = 2300A/s VR = 900V, VGE = -15V, Tvj = 25C VR = 900V, VGE = -15V, Tvj = 125C Erec 25 50 mJ mJ Qr 60 105 C C IRM 160 200 A A VF min. - typ. 2,1 2,1 max. 2,5 2,5 V V 2(8) BSM200GB170DLC_3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module lPaste = 1 W/m*K / lgrease = 1 W/m*K RthCK RthJC - typ. 0,010 max. 0,075 0,150 K/W K/W K/W Tvj max - - 150 C Tvjop -40 - 125 C Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight Schraube / screw M6 M 3 Al2O3 20 mm 11 mm 425 Nm - 6 Anschlusse / terminals M6 M 2,5 - 5 Nm G 340 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) BSM200GB170DLC_3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) VGE = 15V 400 350 300 250 Tvj = 25C Tvj = 125C IC [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 400 350 300 250 VGE = 19V VGE = 15V VGE = 13V VGE = 11V VGE = 9V IC = f (VCE) Tvj = 125C IC [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) BSM200GB170DLC_3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 400 350 300 250 Tvj = 25C Tvj = 125C IC [A] 200 150 100 50 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 400 350 300 250 IF = f (VF) Tvj = 25C Tvj = 125C IF [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) BSM200GB170DLC_3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE = 15V, Rgon = Rgoff =7,5W, VCE = 900V, Tvj = 125C 350 300 250 E [mJ] 200 150 100 50 0 0 50 100 150 200 250 300 350 400 Eoff Eon Erec IC [A] Schaltverluste (typisch) Switching losses (typical) 200 180 160 140 E [mJ] 120 100 80 60 40 20 0 0 5 10 15 Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE = 15V, IC = 200A , VCE = 900V , Tvj = 125C Eoff Eon Erec 20 25 30 35 RG [W] 6(8) BSM200GB170DLC_3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 1 ZthJC [K/W] 0,1 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 t [s] 1 10 i ri [K/kW] : IGBT ti [s] : IGBT ri [K/kW] : Diode ti [s] : Diode 1 8,37 0,0047 27,92 0,0062 2 24,21 0,0356 55,32 0,0473 3 36,07 0,0613 55,32 0,0473 4 6,35 0,4669 11,45 0,2322 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 450 400 350 IC,Modul IC,Chip VGE = 15V, Rg = 7,5 Ohm, T vj= 125C IC [A] 300 250 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 1600 1800 VCE [V] 7(8) BSM200GB170DLC_3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC 8(8) BSM200GB170DLC_3.xls |
Price & Availability of BSM200GB170DLC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |